Theresa Hoffmann, PhD Student

Expperimental Semiconductor Physics I - Walter-Schottky-Institut / Prof. Martin Stutzmann

Member of RTG since 2019

  • ATUMS Phase II Project 9. Electronic properties of field effect devices based on organically functionalized inorganic nanostructures

Contact: theresa.hoffmann(at)tum.de

Conference Presentations only ⇒ for publications see the link to all ATUMS publications

2019:

ICNS 13 (13th International Conference on Nitride Semiconductors), 7-12 Juli 2019, Hyatt Regency Bellevue, Bellevue, Washington, USA, Poster mit Titel „Selective Area Growth of GaN Nanowires on Silicon Carbide“