Theresa Hoffmann, PhD Student
Expperimental Semiconductor Physics I - Walter-Schottky-Institut / Prof. Martin Stutzmann
Member of RTG since 2019
- ATUMS Phase II Project 9. Electronic properties of field effect devices based on organically functionalized inorganic nanostructures
Contact: theresa.hoffmann(at)tum.de
Conference Presentations only ⇒ for publications see the link to all ATUMS publications
2019:
ICNS 13 (13th International Conference on Nitride Semiconductors), 7-12 Juli 2019, Hyatt Regency Bellevue, Bellevue, Washington, USA, Poster mit Titel „Selective Area Growth of GaN Nanowires on Silicon Carbide“